參數(shù)資料
型號(hào): FM27C512Q120
廠(chǎng)商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: Cable; Number of Conductors:7; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
中文描述: 64K X 8 UVPROM, 120 ns, CDIP28
封裝: WINDOWED, CERDIP-28
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 100K
代理商: FM27C512Q120
4
www.fairchildsemi.com
F
FM27C512
Capacitance
T
A
= +25
°
C, f = 1 MHz (Note 2)
Symbol
Parameter
Conditions
Typ
Max
Units
C
IN1
Input Capacitance
except OE/V
PP
V
IN
= 0V
6
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
9
12
pF
C
IN2
OE/V
PP
Input
Capacitance
V
IN
= 0V
20
25
pF
AC Test Conditions
Output Load
1 TTL Gate and C
L
= 100 pF (Note 8)
Input Rise and Fall Times
5 ns
Input Pulse Levels
0.45V to 2.4V
Timing Measurement Reference Level (Note 9)
Inputs
Outputs
0.8V and 2V
0.8V and 2V
AC Waveforms
(Notes 6, 7)
Note 1:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Note 2:
This parameter is only sampled and is not 100% tested.
Note 3:
OE may be delayed up to t
ACC
t
OE
after the falling edge of CE without impacting t
ACC
.
Note 4:
The t
and t
compare level is determined as follows:
High to TRI-STATE, the measured V
OH1
(DC) - 0.10V;
Low to TRI-STATE, the measured V
OL1
(DC) + 0.10V.
Note 5:
TRI-STATE may be attained using OE or CE .
Note 6:
The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1
μ
F ceramic capacitor be used on every device
between V
CC
and GND.
Note 7:
The outputs must be restricted to V
CC
+ 1.0V to avoid latch-up and device damage.
Note 8:
1 TTL Gate: I
OL
= 1.6 mA, I
OH
= -400
μ
A. C
L
: 100 pF includes fixture capacitance.
Note 9:
Inputs and outputs can undershoot to -2.0V for 20 ns Max.
Address Valid
Valid Output
Hi-Z
2V
0.8V
2V
0.8V
2V
0.8V
ADDRESS
OUTPUT
CE
OE
t
CE
2V
0.8V
(Note 3)
(Note 3)
t
DF
(Note 4, 5)
(Note 4, 5)
t
OH
Hi-Z
t
OE
ACC
t
CF
t
DS800035-4
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FM27C512Q90 功能描述:可擦除可編程ROM DIP-28 RoHS:否 制造商:Maxim Integrated 類(lèi)型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類(lèi)型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92
FM27C512Q-90 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:524288-Bit (64Kx 8) High Performance CMOS EPROM(95.70 k)
FM27C512QE120 功能描述:可擦除可編程ROM DIP-28 RoHS:否 制造商:Maxim Integrated 類(lèi)型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類(lèi)型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92
FM27C512QE-120 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:524288-Bit (64Kx 8) High Performance CMOS EPROM(95.70 k)