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參數(shù)資料
| 型號(hào)： | FM22L16 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4Mbit FRAM Memory |
| 中文描述： | 的4Mb FRAM存儲(chǔ)器 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 214K |
| 代理商： | FM22L16 |
FM22L16
Rev. 1.0
Mar. 2007
Page 9 of 15
Read Cycle
AC Parameters
(T
A
= -40
°
C to + 85
°
C, V
DD
= 2.7V to 3.6V unless otherwise specified)
Symbol Parameter
t
RC
Read Cycle Time
t
CE
Chip Enable Access Time
t
AA
Address Access Time
t
OH
Output Hold Time
t
AAP
Page Mode Address Access Time
t
OHP
Page Mode Output Hold Time
t
CA
Chip Enable Active Time
t
PC
Precharge Time
t
BA
/UB, /LB Access Time
t
AS
Address Setup Time (to /CE low)
t
AH
Address Hold Time (/CE-controlled)
t
OE
Output Enable Access Time
t
HZ
Chip Enable to Output High-Z
t
OHZ
Output Enable High to Output High-Z
t
BHZ
/UB, /LB High to Output High-Z
Write Cycle
AC Parameters
(T
A
= -40
°
C to + 85
°
C, V
DD
= 2.7V to 3.6V unless otherwise specified)
Symbol Parameter
t
WC
Write Cycle Time
t
CA
Chip Enable Active Time
t
CW
Chip Enable to Write Enable High
t
PC
Precharge Time
t
BHZ
/UB, /LB High to Output High-Z
t
PWC
Page Mode Write Enable Cycle Time
t
WP
Write Enable Pulse Width
t
AS
Address Setup Time (to /CE low)
t
ASP
Page Mode Address Setup Time
(to /WE low)
t
AHP
Page Mode Address Hold Time
(to /WE low)
t
WLC
Write Enable Low to /CE High
t
WLA
Write Enable Low to A(17:2) Change
t
AWH
A(17:2) Change to Write Enable High
t
DS
Data Input Setup Time
t
DH
Data Input Hold Time
t
WZ
Write Enable Low to Output High Z
t
WX
Write Enable High to Output Driven
t
WS
Write Enable to /CE Low Setup Time
t
WH
Write Enable to /CE High Hold Time
Notes
1
This parameter is characterized but not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. The parameters t
WS
and t
WH
are not tested.
Capacitance
(T
A
= 25
°
C , f=1 MHz, V
DD
= 3.3V)
Symbol
Parameter
C
I/O
Input/Output Capacitance (DQ)
C
IN
Input Capacitance
C
ZZ
Input Capacitance of /ZZ pin
-55
Min
110
-
-
20
-
5
55
55
-
0
55
-
-
-
-
Max
-
55
110
-
35
-
-
-
30
-
-
10
10
10
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
1
-55
Min
110
55
55
55
5
35
16
0
8
15
25
25
110
14
0
-
10
0
0
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
2
2
Max
8
6
8
Units
pF
pF
pF
Notes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM22L16-55-TG | 4Mbit FRAM Memory |
| FM2400TSIM | MODULATOR |
| FM24C16A | 16Kb FRAM Serial Memory |
| FM24C16A-S | 16Kb FRAM Serial Memory |
| FM24C64 | FM24C64 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM22L16_12 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:Nonvolatile F-RAM Memory Module (TWR-FRAM) |
| FM22L16-55-TG | 功能描述:F-RAM 4M (256Kx16) 55ns F-RAM RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM22L16-55-TG | 制造商:Ramtron International Corporation 功能描述:NVRAM Memory IC |
| FM22L16-55-TGTR | 功能描述:F-RAM 4M (256Kx16) 55ns F-RAM RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM22L16-60-TGTR | 制造商:Cypress Semiconductor 功能描述:2MBIT F-RAM MEMORY - Tape and Reel |
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