參數(shù)資料
型號: FM22L16
廠商: Electronic Theatre Controls, Inc.
英文描述: 4Mbit FRAM Memory
中文描述: 的4Mb FRAM存儲器
文件頁數(shù): 10/15頁
文件大?。?/td> 214K
代理商: FM22L16
FM22L16
Rev. 1.0
Mar. 2007
Page 10 of 15
Power Cycle Timing
(T
A
= -40
°
C to + 85
°
C, V
DD
= 2.7V to 3.6V unless otherwise specified)
Symbol
Parameter
t
PU
Power-Up to First Access Time (after V
DD
min)
t
PD
Power-Down to Last Access Time (prior to V
TP
)
t
VR
V
DD
Rise Time
t
VF
V
DD
Fall Time
t
ZZEN
Sleep Mode Enter Time (/ZZ low to /CE don’t care)
t
ZZEX
Sleep Mode Exit Time (/ZZ high to 1
st
access after wakeup)
Notes
1
Slope measured at any point on V
DD
waveform.
2
Ramtron cannot test or characterize all V
DD
power ramp profiles. The behavior of the internal circuits is difficult to predict
when V
DD
is below the level of a transistor threshold voltage. Ramtron strongly recommends that V
DD
power up faster than
100ms through the range of 0.4V to 1.0V.
Data Retention
(V
DD
= 2.7V to 3.6V)
Parameter
Data Retention
AC Test Conditions
Input Pulse Levels
0 to 3V
Input rise and fall times
3 ns
Input and output timing levels
1.5V
Output Load Capacitance
30pF
Read Cycle Timing 1
(/CE low, /OE low)
Min
450
50
100
-
450
Max
-
0
-
-
0
-
Units
μ
s
μ
s
μ
s/V
μ
s/V
μ
s
μ
s
Notes
1,2
1,2
Min
10
Units
Years
Notes
Read Cycle Timing 2
(/CE-controlled)
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