參數(shù)資料
型號(hào): FM18L08-70-S
廠商: Electronic Theatre Controls, Inc.
元件分類(lèi): DRAM
英文描述: 4Kb FRAM Serial 3V Memory
中文描述: 4Kb的鐵電串行3V的記憶
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 80K
代理商: FM18L08-70-S
Ramtron
FM18L08
23 March 2001
6/11
Electrical Specifications
Absolute Maximum Ratings
Description
Ratings
-40
°
C to + 85
°
C
-1.0V to +5.0V
300
°
C
Ambient storage or operating temperature
Voltage on any pin with respect to ground
Lead temperature (Soldering, 10 seconds)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these or any other conditions above those listed in
the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for
extended periods may affect device reliability
DC Operating Conditions
TA = -40
°
C to + 85
°
C, VDD = 2.7V to 3.65V unless otherwise specified
Symbol
Parameter
Min
VDD
Power Supply
2.7
IDD
VDD Supply Current - Active
ISB
Standby Current - TTL
ISB
Standby Current - CMOS
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
-1.0
VIH
Input High Voltage
2.0
VOL
Output Low Voltage
VOH
Output High Voltage
2.4V
Notes
1. Referenced to VSS.
2. VDD = 3.65V, /CE cycling at minimum cycle time. All inputs at CMOS levels, all outputs unloaded.
3. VDD = 3.65V, /CE at VIH, All inputs at TTL levels, all outputs unloaded.
4. VDD = 3.65V, /CE at VDD, All inputs at CMOS levels, all outputs unloaded.
5. VIN, VOUT between VDD and VSS.
6. IOL = 3.2 mA
7. IOH = -1.0 mA
Typ
Max
Units
V
mA
μ
A
μ
A
μ
A
μ
A
V
V
V
V
Notes
5
7
3.65
15
400
15
10
10
0.8
VDD + 1.0
0.4
1
2
3
4
5
5
1
1
1,6
1,7
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