- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382960 > FM18L08-70-P (Electronic Theatre Controls, Inc.) .050 X .050 MICRO STRIPS PDF資料下載
參數(shù)資料
| 型號(hào)： | FM18L08-70-P |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | .050 X .050 MICRO STRIPS |
| 中文描述： | 256Kb的2.7 - 3.6V的Bytewide FRAM存儲(chǔ)器 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 80K |
| 代理商： | FM18L08-70-P |
Ramtron
FM18L08
23 March 2001
5/11
FRAM Design Considerations
When designing with FRAM for the first time, users
of SRAM will recognize a few minor differences. First,
bytewide FRAM memories latch each address on the
falling edge of chip enable. This allows the address
bus to change after starting the memory access. Since
every access latches the memory address on the
falling edge of /CE, users should not ground it as they
might with SRAM.
Users that are modifying existing designs to use
FRAM should examine the hardware address
decoders. Decoders should be modified to qualify
addresses with an address valid signal if they do not
Figure 2. Memory Address Relationships
already. In many cases, this is the only change
required. Systems that drive chip enable active, then
inactive for each valid address may need no
modifications. An example of the target signal
relationships are shown in Figure 2. Also shown is a
common SRAM signal relationship that will not work
for the FM18L08.
The main design issue is to create a decoder scheme
that will drive /CE active, then inactive for each
address. This accomplishes the two goals of latching
the new address and creating the precharge period.
Valid Memory Read Relationship
FRAM
Signaling
CE
Address
A1
A2
Data
D1
D2
Invalid Memory Read Relationship
SRAM
Signaling
CE
Address
A1
A2
Data
D1
D2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM18L08-70-S | 4Kb FRAM Serial 3V Memory |
| FM1F4N | .050 X .050 MICRO STRIPS |
| FM209 | 9600/14400 BPS MONOFAX MODEM FAMILY |
| FM22L16 | 4Mbit FRAM Memory |
| FM22L16-55-TG | 4Mbit FRAM Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM18L08-70-PG | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-S | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-SG | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-SG | 制造商:Ramtron International Corporation 功能描述:Nonvolatile SRAM Memory IC Memory Type:F |
| FM18L08-70-SGTR | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。