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參數(shù)資料
| 型號： | FJYF2906 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Multi-Chip General Purpose Amplifier |
| 中文描述： | 150 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-563F, 6 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 141K |
| 代理商： | FJYF2906 |
2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
F
Absolute Maximum Ratings
T
A
=25
°
C
unless otherwise noted
Electrical Characteristics
T
A
=25
°
C
unless otherwise noted
* Pulse Test: Pulse Width
300ms, Duty Cycle
≤
2.0%
NOTE:
All voltage (V) and currents (A) are negative for PNP transistors.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Value
40
40
5
150
-55 ~ +150
Units
V
V
V
mA
°
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
- Continuous
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CEX
On Characteristics
h
FE
Parameter
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
C
= 1
M
A, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
= 10
μ
A, I
C
= 0
V
CE
= 30V, V
BE
= 3V
40
40
5
V
V
V
N
A
50
DC Current Gain *
V
CE
= 1V, I
C
= 0.1
M
A
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
60
80
100
60
30
300
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.3
0.5
0.95
1
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
0.65
Small Signal Characteristics
f
T
Current gain Bandwidth Product
V
CE
= 20V, I
C
= 10mA
f = 100MHz
V
CB
= 5V, I
E
= 0, f = 1MHz
V
EB
= 0.5V, I
C
= 0, f = 1MHz
250
MHz
C
obo
C
ibo
Output Capacitance
Input Capacitance
4.5
10
pF
pF
FJYF2906
PNP Multi-Chip General Purpose Amplifier
Collector-Emitter Voltage: V
CEO
= 40V
Amplifier and Switching Application
E2 is on pin 1
E2
B2
B1
C2
E1
C1
SOT-563F
Mark: S1
(Pin1)
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| FJYF2906PWD | 功能描述:TRANSISTOR PNP 40V 150MA SOT563F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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