參數(shù)資料
型號: FJZ594JC
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Si N-channel Junction FET
中文描述: 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: SOT-623F, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 192K
代理商: FJZ594JC
2003 Fairchild Semiconductor Corporation
Rev. D, July 2003
F
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25
°
C
unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Thermal Characteristics
T
C
=25
°
C
unless otherwise noted
I
DSS
Classification
Classification
I
DSS
(
μ
A)
Symbol
V
GDO
I
G
I
D
P
D
T
J
T
STG
Parameter
Ratings
-20
10
1
100
150
-55 ~ 150
Units
V
mA
mA
mW
°
C
°
C
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
BV
GDO
V
GS
(off)
I
DSS
ly
fs
l
C
ISS
C
RSS
Parameter
Test Condition
I
G
= -100uA
V
DS
=5V, I
D
=1
μ
A
V
DS
=5V, V
GS
=0
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
Min.
-20
Typ.
Max.
Units
V
V
μ
A
mS
pF
pF
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
-0.6
-1.5
350
150
0.4
1.2
3.5
0.65
Symbol
Parameter
Max
1250
Units
°
C/W
R
θ
jA
Thermal Resistance, Junction to Ambient
B
C
150 ~ 240
210 ~ 350
FJZ594J
Capacitor Microphone Applications
Especially Suited for use in Audio, Telephone Capacitor Microphones
Excellent Voltage Characteristic
Excellent Transient Characteristic
1. Drain 2. Source 3. Gate
J1B
Marking
I
dss
grade
1
2
3
SOT-623F
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