參數(shù)資料
型號(hào): FJY3005R
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: NPN Epitaxial Silicon Transistor
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-523F, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 266K
代理商: FJY3005R
tm
2006 Fairchild Semiconductor Corporation
FJY3005R Rev. A
1
www.fairchildsemi.com
F
November 2006
FJY3005R
NPN Epitaxial Silicon Transistor
Features
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R1=4.7K
, R2=10K
)
Complement to FJY4005R
Absolute Maximum Ratings *
T
a
= 25°C unless otherwise noted
Symbol
Parameter
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics*
T
a
=25
°
C unless otherwise noted
Symbol
R
θ
JA
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Electrical Characteristics*
T
C
= 25°C unless otherwise noted
Symbol
Parameter
* Pulse Test: PW
300
μ
s, Duty Cycle
2%
Value
Units
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
50
V
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
10
V
I
C
T
STG
T
J
P
C
Collector Current
100
mA
Storage Temperature Range
-55~150
°
C
Junction Temperature
150
°
C
Collector Power Dissipation
, by R
θ
JA
200
mW
Parameter
Max
600
Units
°
C/W
Test Condition
MIN
Typ
MAX
Units
V
(BR)CBO
Collector-Emitter Breakdown Voltage
I
C
= 10 uA, I
E
= 0
50
V
V
(BR)CEO
Collector-Base Breakdown Voltage
I
C
= 100 uA, I
B
= 0
50
V
I
CBO
Collector-Cutoff Current
V
CB
= 40 V, I
E
= 0
0.1
uA
h
FE
DC Current Gain
V
CE
= 5 V, I
C
= 5 mA
30
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 0.5 mA
0.3
V
f
T
Current Gain - Bandwidth Product
V
CE
= 10V, I
C
= 5 mA
250
MHz
C
cb
Output
Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
3.7
pF
V
I(
off
)
Input Off Voltage
V
CE
= 5 V, I
C
= 100uA
0.3
V
V
I(
on)
Input On Voltage
V
CE
= 0.3V, I
C
= 20mA
2.5
V
R
1
Input Resistor
3.2
4.7
6.2
K
R
1
/R
2
Resistor Ratio
0.42
0.47
0.52
SOT
-
523F
E
B
C
Eqivalent Circuit
B
E
C
S05
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