參數(shù)資料
型號(hào): FJV3105R
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: NPN Epitaxial Silicon Transistor
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-23, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 88K
代理商: FJV3105R
2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
F
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cut-off Current
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
C
ob
Output Capacitance
Parameter
Value
50
50
10
100
200
150
-55 ~ 150
Units
V
V
V
mA
mW
°
C
°
C
Test Condition
I
C
=10
μ
A, I
E
=0
I
C
=100
μ
A, I
B
=0
V
CB
=40V, I
E
=0
V
CE
=5V, I
C
=5mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
f=1MHz
V
CE
=10V, I
C
=5mA
V
CE
=5V, I
C
=100
μ
A
V
CE
=0.3V, I
C
=20mA
Min.
50
50
Typ.
Max.
Units
V
V
μ
A
0.1
30
0.3
V
pF
3.7
f
T
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Current Gain Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
250
MHz
V
V
K
0.3
2.5
6.2
0.52
3.2
0.42
4.7
0.47
FJV3105R
Switching Application
(Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R
1
=4.7K
, R
2
=10K
)
Complement to FJV4105R
Equivalent Circuit
B
E
C
R1
R2
R25
Marking
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
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