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參數(shù)資料
| 型號： | FJP5554TU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Fast Switching Transistor |
| 中文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-200, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 172K |
| 代理商： | FJP5554TU |
3
www.fairchildsemi.com
FJP5554 Rev. A
F
Typical Performance Characteristics
Figure 1. Static Characterstic
Figure 2. DC Current Gain
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Output Capacitance
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
B
=350mA
I
B
=150mA
I
B
=100mA
I
C
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
B
=50mA
0.01
0.1
1
10
1
10
100
T
C
= 125
o
C
T
C
= 75
o
C
T
C
= 25
o
C
h
I
C
[A], COLLECTOR CURRENT
V
CE
=3V
T
C
= - 25
o
C
0.01
0.1
1
10
1
10
100
h
I
C
[A], COLLECTOR CURRENT
V
CE
=5V
T
C
= - 25
o
C
T
C
= 25
o
C
T
C
= 75
o
C
T
C
= 125
o
C
0.1
1
10
0.01
0.1
1
10
V
C
(
I
C
[A], COLLECTOR CURRENT
I
C
=3.5 I
B
T
C
= 75
o
C
T
C
= 125
o
C
T
C
= - 25
o
C
T
C
= 25
o
C
0.1
1
10
0.1
1
10
V
B
(
I
C
[A], COLLECTOR CURRENT
T
C
= 125
o
C
I
C
=3.5 I
B
T
C
= 75
o
C
T
C
= 25
o
C
T
C
= - 25
o
C
0.1
1
10
100
10
100
1000
C
O
V
CB
[V], COLLECTOR-BASE VOLTAGE
f = 1MHz, I
E
=0
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| FJP5555TU | 功能描述:兩極晶體管 - BJT NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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