參數(shù)資料
型號: FJPF3305
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: High Voltage Switch Mode Application
中文描述: 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220F, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 80K
代理商: FJPF3305
2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
F
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
* Pulse test: PW
300
μ
s, Duty Cycle
2%
h
FE
Classification
Parameter
Value
700
400
9
4
8
2
30
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
=500
μ
A, I
E
=0
I
C
=5mA, I
B
=
0
I
E
=500
μ
A, I
C
=0
V
CB
=700V, I
E
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
V
CC
=125V,
I
C
=2A=5I
B1
=-5I
B2
R
L
=62.5
Min.
700
400
9
Typ.
Max.
Units
V
V
V
μ
A
μ
A
1
1
*
DC Current Gain
19
8
35
40
0.5
0.6
1
1.2
1.6
V
V
V
V
V
V
BE
(sat)
Base-Emitter On Voltage
f
T
C
ob
t
ON
t
STG
t
F
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
4
MHz
pF
μ
s
μ
s
μ
s
65
0.8
4
0.9
Classification
h
FE2
R
O
19 ~ 28
26 ~ 35
FJPF3305
High Voltage Switch Mode Application
High Speed Switching
Suitable for Electronic Ballast and Switching Regulator
1
1.Base 2.Collector 3.Emitter
TO-220F
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