參數(shù)資料
型號: FJAF4310R
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: NPN Epitaxial Silicon Transistor
中文描述: 10 A, 140 V, NPN, Si, POWER TRANSISTOR
封裝: TO-3PF, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 87K
代理商: FJAF4310R
2002 Fairchild Semiconductor Corporation
F
Rev. A, November 2002
Typical Characteristics
Figure 1. Static Characterstic
Figure 2. DC current Gain
Figure 3. V
CE
(sat) vs. I
B
Characteristics
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
0
1
2
3
4
0
1
2
3
4
5
6
7
8
9
10
I
B
= 400mA
I
B
= 300mA
I
B
= 20mA
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
I
B
= 100mA
I
B
= 50mA
I
C
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
10
100
1000
V
CE
= 4 V
Ta = 25
o
C
Ta = 125
o
C
Ta = - 25
o
C
h
F
,
I
C
[A], COLLECTOR CURRENT
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
C
= - 10A
I
C
= - 5A
V
C
(
I
B
[A], BASE CURRENT
0.01
0.1
1
10
0.01
0.1
1
I
C
= 10 I
B
Ta = 25
o
C
Ta = 125
o
C
Ta = - 25
o
C
V
C
(
I
C
[A], COLLECTOR CURRENT
0.0
0.5
1.0
1.5
0
2
4
6
8
10
V
CE
= 4 V
Ta = 25
o
C
Ta = 125
o
C
Ta = - 25
o
C
I
C
V
BE
[V], Base-Emitter On VOLTAGE
0.1
1
10
100
0.1
1
10
t=100ms
t=10ms
T
C
=25
Single Pulse
I
C
(DC)
I
C
(Pulse)
I
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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