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參數(shù)資料
| 型號： | FJAF4310 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor |
| 中文描述： | 10 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 87K |
| 代理商： | FJAF4310 |
2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
F
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
B
Base Current (DC)
P
C
Collector Dissipation (T
C
=25
°
C)
R
θ
JC
Junction to Case
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
V
CE
(sat)
Collector-Emitter Saturation Voltage
C
ob
Output Capacitance
f
T
Current Gain Bandwidth Product
* Pulse Test : PW=20
μ
s
h
FE
Classification
Classification
h
FE
Parameter
Value
200
140
6
10
1.5
80
1.48
150
- 55 ~ 150
Units
V
V
V
A
A
W
°
C/W
°
C
°
C
Test Condition
I
C
=5mA, I
E
=0
I
C
=50mA, R
BE
=
∞
I
E
=5mA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CB
=10V, f=1MHz
V
CE
=5V, I
C
=1A
Min.
200
140
6
Typ.
Max.
Units
V
V
V
μ
A
μ
A
10
10
180
0.5
*
DC Current Gain
50
V
pF
MHz
250
30
R
O
Y
50 ~ 100
70 ~ 140
90 ~ 180
FJAF4310
Audio Power Amplifier
High Current Capability : I
C
=10A
High Power Dissipation
Wide S.O.A
Complement to FJAF4210
TO-3PF
1.Base 2.Collector 3.Emitter
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FJAF4310O | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
| FJAF4310OTU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJAF4310R | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
| FJAF4310RTU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJAF4310Y | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
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