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參數(shù)資料
| 型號： | FGR15N40A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Strobe Flash N-Channel Logic Level IGBT |
| 中文描述： | 8 A, 400 V, N-CHANNEL IGBT |
| 封裝： | SSOT-8 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 118K |
| 代理商： | FGR15N40A |
FGR15N40A Rev. A1
www.fairchildsemi.com
F
5
Figure 13. Switching Time vs Collector Current
Figure 14. Switching Time vs Gate Resistance
Figure 15. Gate Charge
Figure 16. Collector Current Limit vs Gate to
Emitter Voltage
Figure 17. Normalized Transient Thermal Impedance, Junction to Case
Typical Characteristics
(Continued)
0.1
1
6
S
μ
s
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
75
100
125
150
V
CC
= 300V, V
GE
= 4V, R
GE
= 51
, T
J
= 25
o
C
t
off
t
fall
t
on
t
rise
0.5
1
3
0
50
100
150
200
250
300
R
G
, GATE RESISTANCE (
)
S
μ
s
t
off
t
fall
t
on
t
rise
V
CC
= 300V, I
CE
= 150A, V
GE
= 4V, T
J
= 25
o
C
Q
G
, GATE CHARGE (nC)
V
G
,
I
G(REF)
= 1mA, V
CC
= 300V, R
L
= 2
, T
J
= 25
o
C
0
1
3
5
7
8
0
5
10
15
20
25
30
35
40
45
2
4
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
C
,
0
20
40
60
80
100
120
140
160
T
= 25°C
PULSE DURATION = 100μs
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
0.001
1.0
10
-4
10
-2
10
-1
10
0
10
1
10
-3
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JA
X R
θ
JA
) + T
C
SINGLE PULSE
2.0
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.1
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