參數(shù)資料
型號： FGH20N6S2
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 7/8頁
文件大?。?/td> 183K
代理商： FGH20N6S2
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler
’
s
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as
“
ECCOSORBD
LD26
”
or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5.
Gate Voltage Rating
- Never exceed the gate-
voltage rating of V
. Exceeding the rated V
GE
can result in permanent damage to the oxide
layer in the gate region.
6.
Gate Termination
- The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7.
Gate Protection
- These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (I
) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
f
MAX1
or f
MAX2
; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t
+ t
).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. t
d(OFF)I
and t
d(ON)I
are
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than T
. t
is important
when controlling output ripple under a lightly loaded
condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON2
).
The allowable dissipation (P
D
) is defined by
P
D
= (T
JM
- T
C
)/R
θ
JC
. The sum of device switching
and conduction losses must not exceed P
D
. A 50%
duty factor was used (Figure 3) and the conduction
losses (P
C
) are approximated by P
C
= (V
CE
x I
CE
)/2.
E
and E
are defined in the switching
waveforms shown in Figure 21. E
ON2
is the integral
of the instantaneous power loss (I
CE
x V
CE
) during
turn-on and E
OFF
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-off. All tail losses
are included in the calculation for E
OFF
; i.e., the
collector current equals zero (I
CE
= 0)
ECCOSORBD
is a Trademark of Emerson and Cumming, Inc.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGH20N6S2D 功能描述:IGBT 晶體管 Comp N-Ch 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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FGH25T120SMD_F155 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 25A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 25A FS2 TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 50A 428W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 25A FS2 Trench IGBT
FGH30N120FTD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Field stop trench technology
FGH30N120FTDTU 功能描述:IGBT 晶體管 N-CH/1200V 30A FS Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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