參數(shù)資料
型號： FGH20N6S2
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 5/8頁
文件大?。?/td> 183K
代理商： FGH20N6S2
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
(Continued)
I
C
,
0
20
40
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
120
T
J
= 125
o
C
T
J
= -55
o
C
100
80
T
J
= 25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
6
8
10
12
14
16
4
V
G
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1mA, R
L
= 42.6
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 600V
V
CE
= 400V
5
10
15
20
25
35
0
30
6
4
8
0
16
12
10
14
2
T
C
, CASE TEMPERATURE (
o
C)
E
T
,
m
J
R
G
= 25
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 14A
I
CE
= 7A
I
CE
= 3A
0.2
0
0.8
0.6
0.4
50
25
75
100
125
150
R
G
, GATE RESISTANCE (
)
E
T
,
m
J
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
0.1
0.05
10
1
I
CE
= 14A
1
10
100
1000
I
CE
= 7A
I
CE
= 3A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
10
20
30
40
50
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
C
OES
C
IES
60
70
80
90
100
0.2
0.6
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
2.0
9
2.2
2.6
2.4
8
10
11
12
16
2.8
V
C
,
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
3.6
7
13
14
15
DUTY CYCLE < 0.5%
I
CE
= 14A
5
I
CE
= 3A
I
CE
= 7A
3.0
3.2
3.4
相關(guān)PDF資料
PDF描述
FGP20N6S2 600V, SMPS II Series N-Channel IGBT
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FGP30N6S2D Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGH20N6S2D 功能描述:IGBT 晶體管 Comp N-Ch 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH25N120FTDS 功能描述:IGBT 晶體管 1200V 25A Field Stop Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH25T120SMD_F155 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 25A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 25A FS2 TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 50A 428W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 25A FS2 Trench IGBT
FGH30N120FTD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Field stop trench technology
FGH30N120FTDTU 功能描述:IGBT 晶體管 N-CH/1200V 30A FS Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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