參數(shù)資料
型號： FGD3N60LSDTF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： IGBT
中文描述： 6 A, 600 V, N-CHANNEL IGBT
封裝： D-PAK, 3 PIN
文件頁數(shù)： 5/8頁
文件大?。?/td> 848K
代理商： FGD3N60LSDTF
5
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Gate Charge
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
200
400
600
800 1000
10
100
1000
Common Emitter
V
CC
= 480V, V
GE
= 10V
I
C
= 3A
T
C
= 25
°
C
T
C
= 125
°
C
Ton
Tr
S
Gate Resistance, R
G
[
]
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Common Emitter
R
L
= 160
Vcc = 480V
T
C
= 25
°
C
G
G
Gate Charge, Q
g
[nC]
200
Gate Resistance, R
G
[
]
400
600
800 1000
100
1000
10000
Toff
Tf
S
Common Emitter
V
CC
= 480V, V
GE
= 10V
I
C
= 3A
T
C
= 25
°
C
T
C
= 125
°
C
200
Gate Resistance, R
G
[
]
400
600
800 1000
10
100
1000
10000
S
μ
J
Eon
Eoff
Common Emitter
V
CC
= 480V, V
GE
= 10V
I
C
= 3A
T
C
= 25
°
C
T
C
= 125
°
C
2
4
10
100
Tr
Ton
S
Collector Current, I
C
[A]
Common Emitter
Vcc = 480V, V
GE
= 10V
R
G
= 470
T
C
= 25
°
C
T
C
= 125
°
C
2
4
100
1000
S
Tf
Toff
Collector Current, I
C
[A]
Common Emitter
Vcc = 480 V, V
GE
= 10V
R
G
= 470
T
C
= 25
°
C
T
C
= 125
°
C
相關PDF資料
PDF描述
FGD3N60LSDTM IGBT
FGH20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP20N6S2D Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
FGB20N6S2DT 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
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參數(shù)描述
FGD3N60LSDTM 功能描述:IGBT 晶體管 600V IGBT HID Application RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGD3N60UNDF 功能描述:IGBT 晶體管 600V, 3A Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGD4536 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:360V, PDP IGBT
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FGD4536TM_F065 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 360V 125W DPAK
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