參數(shù)資料
型號(hào)： FGD3N60LSD
廠商： Fairchild Semiconductor Corporation
英文描述： IGBT
中文描述： IGBT的
文件頁(yè)數(shù)： 6/8頁(yè)
文件大小： 848K
代理商： FGD3N60LSD
6
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Forward Characteristics
Figure 15. Forward Voltage Drop Vs Tj
Figure 16. SOA Characteristics
Figure 17. Transient Thermal Impedance of IGBT
0
1
2
3
4
0.1
1
10
100
F
F
[
Forward Voltage Drop, V
F
[V]
Tc = 25
°
C
Tc = 100
°
C
2
4
100
1000
Eon
Eoff
S
μ
J
Collector Curre3
C
[A]
Common Emitter
Vcc = 480 V, V
GE
= 10V
R
G
= 470
T
C
= 25
°
C
T
C
= 125
°
C
25
50
75
100
125
1.2
1.6
2.0
2.4
2.8
I
F
=3 A
I
F
=6 A
F
F
Junction Temperature, Tj [
°
C]
I
F
=1.5 A
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
μ
s
100
μ
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25
°
C
Curves must be derated
linearly with increase
in temperature
C
Collector - Emitter Voltage, V
CE
[V]
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
T
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
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