參數(shù)資料
型號: FGA15N120AND
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: IGBT
中文描述: 24 A, 1200 V, N-CHANNEL IGBT
封裝: TO-3PN, 3 PIN
文件頁數(shù): 3/8頁
文件大小: 574K
代理商: FGA15N120AND
FGA15N120AND Rev. A
F
2003 Fairchild Semiconductor Corporation
0
2
4
6
0
20
40
60
80
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
C
C
Collector-Emitter Voltage, V
CE
[V]
0
2
4
6
8
10
0
20
40
60
80
100
120
20V
17V
15V
12V
V
GE
= 10V
T
C
= 25
C
C
Collector-Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
25
50
75
100
125
2.0
2.5
3.0
3.5
4.0
Common Emitter
V
GE
= 15V
24A
I
C
= 15A
C
C
Case Temperature, T
C
[
]
0.1
1
10
100
1000
0
10
20
30
Vcc = 600V
load Current : peak of square wave
Duty cycle : 50%
Tc = 100
Powe Dissipation = 40W
L
Frequency [kHz]
0
4
8
12
16
20
0
4
8
12
16
20
24A
15A
Common Emitter
T
C
= 25
I
C
= 7.5A
C
C
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
24A
15A
Common Emitter
T
C
= 125
I
C
= 7.5A
C
C
Gate-Emitter Voltage, V
GE
[V]
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