參數(shù)資料
型號(hào): FDZ298N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel 2.5 V Specified PowerTrench BGA MOSFET
中文描述: 6 A, 20 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ULTRA THIN, BGA-9
文件頁數(shù): 4/6頁
文件大?。?/td> 170K
代理商: FDZ298N
FDZ298N Rev B1 (W)
Typical Characteristics
0
2
4
6
8
10
0
3
6
9
12
15
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 6.0A
V
DS
= 5V
15V
10V
0
320
640
960
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 157
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 157°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
r
T
RqJA(t) = r(t) * RqJA
RqJA = 157 °C/W
TJ - TA t2
Duty Cycle, D = t1 / t2
P(pk)
t1
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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