參數(shù)資料
型號(hào): FDZ294N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel 2.5 V Specified PowerTrench BGA MOSFET
中文描述: 6 A, 20 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ULTRA THIN, BGA-9
文件頁(yè)數(shù): 3/9頁(yè)
文件大小: 146K
代理商: FDZ294N
FDZ294N Rev. B3 (W)
Typical Characteristics
0
5
10
15
20
25
30
35
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
2.5V
2.0V
3.5V
3.0V
V
GS
= 4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 2.0V
3.5V
3.0V
4.5V
2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 6A
V
GS
= 4.5V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
=3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
35
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDZ298N-Q (744) DIE 制造商:Fairchild Semiconductor Corporation 功能描述: