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參數(shù)資料
| 型號： | FDZ294N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel 2.5 V Specified PowerTrench BGA MOSFET |
| 中文描述： | 6 A, 20 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-9 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 146K |
| 代理商： | FDZ294N |
FDZ294N Rev. B3 (W)
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
V
GS
= 0 V,
I
D
= 250
μ
A
20
V
BV
DSS
T
J
I
DSS
I
GSS
I
D
= 250
μ
A,Referenced to 25
°
C
V
DS
= 16 V,
V
GS
=
±
12 V,
12
mV/
°
C
μ
A
nA
V
GS
= 0 V
V
DS
= 0 V
1
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 4.5 V, I
D
= 6 A, T
J
=125
°
C
V
DS
= 5 V,
I
D
= 250
μ
A
0.6
0.9
1.5
V
–3
mV/
°
C
m
I
D
= 6 A,
I
D
= 5A,
18
26
24
23
34
31
g
FS
Forward Transconductance
I
D
= 6 A
24
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
670
172
105
1.4
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8
5
14
6
7
1.4
2.1
16
10
25
12
10
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 10V,
V
GS
= 4.5 V
I
D
= 6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Q
rr
Diode Reverse Recovery Charge
Notes:
1.4
A
V
SD
V
GS
= 0 V,
I
S
= 1.4 A
(Note 2)
0.7
1.2
V
15
4
nS
nC
I
F
= 6 A,
d
iF
/d
t
= 100 A/μs
1.
R
θ
JA
is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θ
JB
, is defined for reference. For R
θ
JC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θ
JC
and R
θ
JB
are guaranteed by design while R
θ
JA
is determined by the user's board design.
a)
72°C/W when
mounted on a 1in
2
pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
157°C/W when mounted
on a minimum pad of 2 oz
copper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ294P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDZ295P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDZ298N | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ298N_Q | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ298N-Q (744) DIE | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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