參數(shù)資料
型號: FDW258P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel 1.8V Specified PowerTrench MOSFET
中文描述: 9000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: TSSOP-8
文件頁數(shù): 2/5頁
文件大?。?/td> 161K
代理商: FDW258P
FDW258P Rev. D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A
–12
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–3
mV/
°
C
V
DS
= –10 V,
V
GS
= 8 V,
V
GS
= –8 V.
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V,
I
D
= –9 A
V
GS
= –2.5 V,
I
D
= –8 A
V
GS
= –1.8 V,
I
D
= –6.5 A
V
GS
=–4.5 V, I
D
= –9A, T
J
=125
°
V
GS
= –4.5 V,
V
DS
= –5 V
I
D
= –250
μ
A
–0.4
–0.6
–1.5
V
Gate Threshold Voltage
3
mV/
°
C
8.6
10.6
13.8
11.2
11
14
20
14
m
I
D(on)
On–State Drain Current
–50
A
g
FS
Forward Transconductance
V
DS
= –5 V,
I
D
= –9 A
50
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
5049
1943
1226
pF
pF
pF
V
DS
= –5 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
17
23
201
148
61
8
16
31
37
322
237
73
ns
ns
ns
ns
nC
nC
nC
V
DD
= –6 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –9 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.25
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.25 A
(Note 2)
–0.6
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
87°C/W when
mounted on a 1in
2
pad
of 2 oz copper.
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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