參數(shù)資料
型號(hào)： FDW2512NZ
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述： 6 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： TSSOP-8
文件頁(yè)數(shù)： 5/11頁(yè)
文件大?。?/td> 269K
代理商： FDW2512NZ
FDW2512NZ Rev. A
F
www.fairchildsemi.com
5
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristic
(Continued)
T
A
= 25
°
C unless otherwise noted
1
10
100
0.1
1
10
30
400
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
LIMIAREA MAY BE
DS(ON)
OPERATION IN THIS
100
μ
s
10ms
1ms
0
10
20
30
40
1.0
1.5
2.0
2.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10
20
30
40
0
0.5
1.0
1.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 1.8V
T
A
= 25
o
C
V
GS
= 4.5V
V
GS
= 10V
30
45
60
1
2
3
4
5
15
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 6A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.75
1.00
1.25
1.50
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 4.5V, I
D
= 6A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.50
0.75
1.00
1.25
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDW2512NZ_08 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2512NZ_NL 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2515N 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW2515NZ 功能描述:MOSFET 20V/12V NCh MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2516NZ 功能描述:MOSFET Common Drain N-Channel 2.5V Specified PowerTrench ® MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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