參數(shù)資料
型號： FDW2512NZ_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述： 6 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, TSSOP-8
文件頁數(shù)： 2/11頁
文件大?。?/td> 269K
代理商： FDW2512NZ_NL
FDW2512NZ Rev. A
F
www.fairchildsemi.com
2
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
R
G
Gate Resistance
Q
g(TOT)
Total Gate Charge at 4.5V
Q
g(2.5)
Total Gate Charge at 2.5V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Symbol
V
DSS
V
GS
Parameter
Ratings
20
±
12
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 4.5V, R
θ
JA
= 77
o
C/W)
Continuous
(
T
C
= 100
o
C, V
GS
= 2.5V, R
θ
JA
= 77
o
C/W)
Pulsed
Power dissipation
Derate above 25°C
Operating and Storage Temperature
I
D
6.0
3.3
A
A
A
W
Figure 4
1.6
13
-55 to 150
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Ambient (Note 1)
Thermal Resistance Junction to Ambient (Note 2)
77
114
o
C/W
o
C/W
Device Marking
2512NZ
2512NZ
Device
FDW2512NZ
FDW2512NZ_NL (Note 4)
Package
TSSOP-8
TSSOP-8
Reel Size
13”
13”
Tape Width
12 mm
12 mm
Quantity
2500 units
2500 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 16V
V
GS
= 0V
V
GS
=
±
12V
V
GS
=
±
4.5V
20
-
-
-
-
-
-
-
-
1
5
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
A
= 100
o
C
I
GSS
Gate to Source Leakage Current
±
10
±
250
μ
A
nA
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 6.0A, V
GS
= 4.5V
I
D
= 5.9A, V
GS
= 4.0V
I
D
= 5.3A, V
GS
= 3.1V
I
D
= 5.3A, V
GS
= 2.5V
0.6
-
-
-
-
0.8
0.017
0.018
0.019
0.022
1.5
0.028
0.029
0.035
0.036
V
r
DS(ON)
Drain to Source On Resistance
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
670
170
115
4.2
8
5.1
1.1
2.2
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 4.5V
V
GS
= 0V to 2.5V
V
DD
= 10V
I
D
= 6.0A
I
g
= 1.0mA
12
7.6
-
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDW2515N 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW2515NZ 功能描述:MOSFET 20V/12V NCh MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2516NZ 功能描述:MOSFET Common Drain N-Channel 2.5V Specified PowerTrench ® MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2520 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET
FDW2520C 功能描述:MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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