參數(shù)資料
型號(hào): FDW2510NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 6.4 A, 20 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: TSSOP-8
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 93K
代理商: FDW2510NZ
FDW2510NZ Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
1.3
A
V
SD
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
0.7
1.2
V
18
6
nS
nC
I
F
= 6.4 A
d
iF
/d
t
= 100 A/μs
(Note 2)
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
b) R
θ
JA
is 114
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
R
θ
JA
is 77
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
The diode connected between the gate and source serves only as protection against ESD. No gate over voltage rating is implied.
F
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