參數(shù)資料
型號(hào)： FDW2509NZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
中文描述： 7100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TSSOP-8
文件頁數(shù)： 2/5頁
文件大?。?/td> 124K
代理商： FDW2509NZ
FDW2509NZ Rev. B1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 16 V,
V
GS
= 0 V
V
GS
=
±
12 V, V
DS
= 0 V
I
D
= 250
μ
A
20
V
11
mV/
°
C
μ
A
μ
A
1
±
10
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V, I
D
= 7.1 A
V
GS
= 2.5 V, I
D
= 6.2 A
V
GS
= 4.5 V, I
D
= 7.1A, T
J
=125
°
C
V
GS
= 4.5 V, V
DS
= 5 V
I
D
= 250
μ
A
0.6
0.8
–3
15
18
20
1.5
V
mV/
°
C
m
20
26
29
I
D(on)
On–State Drain Current
15
A
g
FS
Forward Transconductance
V
DS
= 5 V,
I
D
= 7.1 A
36
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1263
327
179
1.9
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
11
15
27
12
13
2
4
20
27
43
22
19
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= 10 V, I
D
= 7.1 A,
V
GS
= 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
1.3
1.2
A
V
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
I
F
= 7.1 A,
d
iF
/d
t
= 100 A/μs
20
14
nS
nC
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 77
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 114
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
F
相關(guān)PDF資料
PDF描述
FDW2510NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2512NZ_NL Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2515N Common Drain N-Channel 2.5V specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDW2510NZ 功能描述:MOSFET 2.5V DUAL NCH SPEC PWR TRCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2511NZ 功能描述:MOSFET 2.5V DUAL NCH SPECIFIED TRENC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2511NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench㈢ MOSFET
FDW2512NZ 功能描述:MOSFET 2.5V TSSOP8 DUAL NCH SPECIFIED TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2512NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
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