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參數(shù)資料
| 型號： | FDW2508 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel 1.8 V Specified PowerTrench MOSFET |
| 中文描述： | 雙P溝道1.8伏指定的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 135K |
| 代理商： | FDW2508 |
FDW2508P Rev. E (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–12
V
Breakdown Voltage Temperature
–2
mV/
°
C
V
DS
= –10 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–0.4
–0.5
2.7
–1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –4.5 V, I
D
= –6 A
V
GS
= –2.5 V, I
D
= –5 A
V
GS
= –1.8 V, I
D
= –4 A
V
GS
= –4.5 V, I
D
= –6A, T
J
=125
°
C
V
GS
= –4.5 V, V
DS
= –5 V
14
17
22
18
18
22
30
25
m
I
D(on)
On–State Drain Current
–30
A
g
FS
Forward Transconductance
V
DS
= –5 V,
I
D
= –6 A
32
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
2644
987
pF
pF
C
rss
Reverse Transfer Capacitance
V
DS
= –6 V,
f = 1.0 MHz
V
GS
= 0 V,
602
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
14
9.1
122
89
26
4
7
25
18
195
142
36
ns
ns
ns
ns
nC
nC
nC
V
DD
= –6 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.1
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.1 A
(Note 2)
–0.59
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 100
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 125
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDW2508P | 功能描述:MOSFET 12V/8V PCh MOSFET Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDW2509 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2509NZ | 功能描述:MOSFET 2.5V N-Ch MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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