參數(shù)資料
型號(hào)： FDW2507NZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Common Drain N-Channel 2.5V specified PowerTrench MOSFET
中文描述： 7500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TSSOP-8
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 130K
代理商： FDW2507NZ
March 2003
2003 Fairchild Semiconductor Corporation
FDW2507NZ Rev C2
FDW2507NZ
Common Drain N-Channel 2.5V specified PowerTrench
MOSFET
General Description
This monolithic common drain N-Channel MOSFET has
been
designed
using
Fairchild
advanced PowerTrench process to optimize the R
DS(ON)
@ V
= 2.5v on special TSSOP-8 lead frame with all
the drains on one side of the package.
Semiconductor’s
Applications
Li-Ion Battery Pack
Features
7.5 A, 20 V
R
DS(ON)
= 19 m
@ V
GS
= 4.5 V
R
DS(ON)
= 23 m
@ V
GS
= 2.5 V
Isolated source and drain pins
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
@ V
GS
= 2.5 V
Low profile TSSOP-8 package
S1
G1
S2
G2
D
D
D
D
TSSOP-8
Pin 1
5
4
6
3
7
2
8
1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
7.5
30
1.6
1.1
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
114
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2507NZ
FDW2507NZ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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FDW2508P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL P SMD TSSOP-8
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FDW2509 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
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