參數(shù)資料
型號(hào)： FDW2504
廠商： Fairchild Semiconductor Corporation
英文描述： Dual P-Channel 2.5V Specified PowerTrench MOSFET
中文描述： 雙P溝道MOSFET的為2.5V指定的PowerTrench
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 1427K
代理商： FDW2504
FDW2504P Rev. C (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A,Referenced to 25
°
C
–16
mV/
°
C
V
DS
= –16 V,
V
GS
= –12 V,
V
GS
= 12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
μ
A
nA
nA
–100
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
–0.6
–1
–1.5
V
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
3
mV/
°
C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
=–4.5 V, I
D
=–3.8A, T
J
=125
°
C
V
GS
= –4.5 V,
I
D
= –3.8 A
I
D
= –3.0 A
0.036
0.056
0.049
0.043
0.070
0.069
I
D(on)
On–State Drain Current
V
DS
= –5 V
–15
A
g
FS
Forward Transconductance
V
DS
= –5 V,
I
D
= –3.5 A
13.2
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1015
446
118
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
11
18
34
34
20
32
55
55
ns
ns
ns
ns
V
DD
= –5 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
9.7
2.2
2.4
16
nC
nC
nC
V
DS
= –5 V,
V
GS
= –4.5 V
I
D
= –3.8 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.83
A
V
GS
= 0 V,
I
S
= –0.83 A
(Note 2)
–0.7
–1.2
V
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 125
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 208
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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