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參數(shù)資料
| 型號： | FDV302 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Digital FET, P-Channel |
| 中文描述： | 數(shù)字場效應管，P溝道 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 63K |
| 代理商： | FDV302 |
FDV302P REV. F
0
1
2
3
4
0
0.05
0.1
0.15
0.2
-V , DRAIN-SOURCE VOLTAGE (V)
-
V = -5.0V
D
-4.5
-2.7
-2.5
-2.0
-3.0
-3.5
-4.0
0
0.05
0.1
0.15
0.2
0.5
1
1.5
2
-I , DRAIN CURRENT (A)
D
R
V = -2.0 V
D
-3.5
-4.5
-2.7
-2.5
-3.0
-4.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
Figure 3. On-Resistance Variation
with Temperature
.
0.5
1
-V , GATE TO SOURCE VOLTAGE (V)
1.5
2
2.5
3
0
0.02
0.04
0.06
0.08
-
D
V = -5V
DS
T = -55°C
125°C
25°C
Figure 5. Transfer Characteristics.
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
0.5
-V , BODY DIODE FORWARD VOLTAGE (V)
-
S
J
25°C
-55°C
V = 0V
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 4. On Resistance
Variation with
Gate-To- Source Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -2.7V
I = -0.05A
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
-V ,GATE TO SOURCE VOLTAGE (V)
R
D
I = -0.05A
A
125 °C
相關PDF資料 |
PDF描述 |
|---|---|
| FDV302P | Digital FET, P-Channel |
| FDV303 | Digital FET, N-Channel |
| FDV303N | Digital FET, N-Channel |
| FDV304 | Digital FET, P-Channel |
| FDV304P | Digital FET, P-Channel |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDV302P | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDV302P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P DIGITAL SOT-23 |
| FDV302P_D87Z | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDV302P_NB8V001 | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDV302P_Q | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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