參數(shù)資料
型號(hào)： FDV304
廠商： Fairchild Semiconductor Corporation
英文描述： Digital FET, P-Channel
中文描述： 數(shù)字場效應(yīng)管，P溝道
文件頁數(shù)： 1/4頁
文件大?。?/td> 63K
代理商： FDV304
August 1997
FDV304P
Digital FET, P-Channel
General Description
Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDV304P
Units
V
DSS
Drain-Source Voltage
-25
V
V
GSS
Gate-Source Voltage
-8
V
I
D
Drain Current
- Continuous
-0.46
A
- Pulsed
-1.5
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
0.35
W
Operating and Storage Temperature Range
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
357
°C/W
FDV304P Rev.E
1
-25 V, -0.46 A continuous, -1.5 A Peak.
R
DS(ON)
= 1.1
@ V
GS
= -4.5 V
R
DS(ON)
= 1.5
@ V
GS
= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
This P-Channel enhancement mode field effect transistors is
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts.
Mark:304
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
S
D
G
1997 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDV304P 功能描述:MOSFET P-Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDV304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P DIGITAL SOT-23
FDV304P_D87Z 功能描述:MOSFET P-Ch Digital FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDV304P_NB8U003 功能描述:MOSFET P-Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDV304P_Q 功能描述:MOSFET P-Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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