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參數(shù)資料
| 型號： | FDV301N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Digital FET , N-Channel |
| 中文描述： | 220 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 97K |
| 代理商： | FDV301N |
March 1999
FDV301N
Digital FET , N-Channel
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDV301N
Units
V
DSS
, V
CC
V
GSS
, V
I
I
D
, I
O
Drain-Source Voltage, Power Supply Voltage
25
V
Gate-Source Voltage, V
IN
Drain/Output Current
8
V
- Continuous
0.22
A
0.5
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
0.35
W
Operating and Storage Temperature Range
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
357
°C/W
FDV301N Rev.F
25 V, 0.22 A continuous, 0.5 A Peak.
R
DS(ON)
= 5
@ V
GS
= 2.7 V
R
DS(ON)
= 4
@ V
GS
= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.
This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.
Mark:301
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
D
G
S
D
S
G
IN
GND
Vcc
INVERTER APPLICATION
OUT
1999 Fairchild Semiconductor Corporation
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| FDV302 | Digital FET, P-Channel |
| FDV302P | Digital FET, P-Channel |
| FDV303 | Digital FET, N-Channel |
| FDV303N | Digital FET, N-Channel |
| FDV304 | Digital FET, P-Channel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDV301N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N DIGITAL SOT-23 |
| FDV301N | 制造商:Fairchild Semiconductor Corporation 功能描述:25V N-CH. FET 4 O SOT23 |
| FDV301N_D87Z | 功能描述:MOSFET 25V N-Ch FET 4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDV301N_NB9V005 | 功能描述:MOSFET N-Ch Digital Automotive Spec RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDV301N_NB9V008 | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:25 V, 0.22 A N-Chan Digital FET |
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