參數(shù)資料
型號(hào)： FDU8882
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝： IPAK-3
文件頁數(shù)： 2/12頁
文件大小： 277K
代理商： FDU8882
FDD8882/FDU8882 Rev. 1.0.0
www.fairchildsemi.com
F
2
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
55
50
12.6
Figure 4
41
55
0.37
-55 to 175
A
A
A
A
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.73
100
52
o
C/W
o
C/W
o
C/W
Device Marking
FDD8882
FDU8882
FDD8882
FDU8882
Device
FDD8882
FDU8882
Package
TO-252AA
TO-251AA
TO-252AA
TO-251AA
Reel Size
13”
N/A (Tube)
13”
N/A (Tube)
Tape Width
12mm
N/A
12mm
N/A
Quantity
2500 units
75 units
2500 units
75 units
FDD8882_NL (Note 3)
FDU8882_NL (Note 3)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
GS
= 4.5V
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
0.0094 0.0115
0.0130 0.0150
-
0.0150 0.0190
相關(guān)PDF資料
PDF描述
FDD8882 N-Channel PowerTrench MOSFET
FDD8882_NL N-Channel PowerTrench MOSFET
FDU8882_NL N-Channel PowerTrench MOSFET
FDU8896 N-Channel PowerTrench MOSFET
FDD8896 N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDU8882_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
FDU8896 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDU8896_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDU8896_Q 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDUE0630-H-R24M=P3 制造商:TOKO Inc 功能描述:
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