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參數資料
| 型號： | FDT459N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 6.5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | FDT459N |
FDT459NRev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = 10V
I = 6.5A
0
1
2
3
4
5
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
5.0
6.0
3.0
3.5
4.0
4.5
R
D
0
5
10
I , DRAIN CURRENT (A)
15
20
25
30
0.5
1
1.5
2
2.5
3
3.5
D
V = 3.5V
5.0
4.0
10
4.5
6.0
2
4
6
8
10
0.02
0.04
0.06
0.08
0.1
0.12
0.14
V , GATE TO SOURCE VOLTAGE (V)
R
D
I = 6.5A
T = 125°C
25°C
1
2
3
4
5
6
0
5
10
15
20
25
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 10V
J
125°C
25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
20
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
25°C
-55°C
V = 0V
J
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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相關代理商/技術參數 |
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| FDT459NJ23Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SOT-223 |
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| FDT-500A | 制造商:MERRIMAC 制造商全稱:MERRIMAC 功能描述:FREQUENCY DOUBLERS |
| FDT55AN06LA0 | 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDT64628 12V 12/CS 1/SKU | 制造商:OSRAM 功能描述:FDT 64628 |
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