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參數(shù)資料
| 型號： | FDT458P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 3.4 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | FDT458P |
FDT458P Rev. B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250
μ
A
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
–30
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–23
mV/
°
C
V
DS
= –24 V, V
GS
= 0 V
V
GS
= –25 V, V
DS
= 0 V
V
GS
= –25 V, V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –10 V,
I
D
= –3.4 A
V
GS
= –4.5 V, I
D
= –2.7 A
V
GS
=–10 V, I
D
=–3.4 A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3.4 A
–1
–1.8
–3
V
Gate Threshold Voltage
4
mV/
°
C
105
157
147
3
130
200
210
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–5
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
205
55
26
pF
pF
pF
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
4.5
12.5
11
2
2.5
0.7
1
9
23
20
4
3.5
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –15 V,
V
GS
= –10 V
I
D
= –3.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.5
A
V
SD
V
GS
= 0 V, I
S
= –2.5 A
(Note 2)
–0.8
–1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 42°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
in
pad of 2 oz
copper
c) 110°C/W when mounted on a
minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDT458P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT459N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDT459NJ23Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SOT-223 |
| FDT461N | 功能描述:MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDT-500A | 制造商:MERRIMAC 制造商全稱:MERRIMAC 功能描述:FREQUENCY DOUBLERS |
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