參數(shù)資料
型號(hào): FDS9431
廠商: Fairchild Semiconductor Corporation
英文描述: P-Channel 2.5V Specified MOSFET
中文描述: P溝道MOSFET的2.5V的指定
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 204K
代理商: FDS9431
F
FDS9431A Rev. A2
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Typical Characteristics
(continued)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0
1
2
3
4
5
0
2
4
6
8
Qg, GATE CHARGE (nC)
-
G
,
I
D
= -1.6A
V
DS
= -5V
-15V
0
0.001
10
20
30
40
50
0.01
0.1
SINGLE PULSE TIME (SEC)
1
10
100
1000
P
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.0001
0.001
001
0.1
t , TI ME (s e c)
1
10
100
300
0.001
0.002
0.005
001
002
005
0.1
0.2
0.5
1
T
r
S n g l e P ul s e
D = 05
01
0.05
0.02
001
02
D u t y C y c l e, D = t /t
1
2
R (t) = r(t) * R
R = 125
°
C/ W
T - T = P * R JA
P(pk)
t
1
t
2
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
-V , DRAIN T O SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
0 .1
0 .3
1
2
5
10
30
0.01
0.05
0 .5
3
10
50
- V , DRAIN-SO URCE VOLTAGE (V)
-
RDS(ON)LMIT
D
DC
1s
100ms
10ms
1ms
10s
V =-4.5V
R = 135
°
C/W
T = 25
°
C
T
A
°
C
100us
V
GS
SINGLE PULSE
R
θ
JA
°
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