參數(shù)資料
型號: FDS8978
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 6.9 A, 30 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 4/9頁
文件大?。?/td> 439K
代理商: FDS8978
F
FDS8978 Rev. A
www.fairchildsemi.com
4
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5.
Unclamped Inductive Switching
Capability
1
10
100
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
Figure 6.
0
3
6
9
12
15
18
1.7
2.0
2.3
2.6
2.9
3.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 150
o
C
25
o
C
-25
o
C
V
DS
= 6V
Transfer Characteristics
Figure 7. Saturation Characteristics
0
3
6
9
12
15
0.0
0.1
0.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.3
0.4
0.5
0.6
0.7
I
D
,
3.0V
3.5V
5.0V
VGS = 10V
Figure 8.
0
10
20
30
40
50
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 7.5A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 1A
Drain to Source On Resistance vs Drain
Current
Figure 9.
Resistance vs Junction Temperature
0.8
1.0
1.2
1.4
1.6
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 7.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
Normalized Drain to Source On
Figure 10.
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics
T
A
= 25°C unless otherwise noted
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