參數(shù)資料
型號(hào)： FDS7764A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 15 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/8頁
文件大小： 276K
代理商： FDS7764A
FDS7764A Rev B1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
===
T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
30
V
I
D
= 250
μ
A, Referenced to 25
°
C
20
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= –12 V , V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
V
GS(th)
===
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.8
1.2
2.0
V
-4
mV/
°
C
V
GS
= 4.5 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15.5 A
V
GS
= 4.5 V, I
D
= 15 A, T
J
= 125
°
C
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 10 V,
I
D
= 15 A
6.0
5.3
9.0
7.5
13.0
m
I
D(on)
On–State Drain Current
Forward Transconductance
50
A
S
g
FS
75
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
5070
550
230
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
17
18
69
29
33
7.5
6.8
25
25
100
42
46
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 15 A,
V
GS
= 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
2.1
A
V
SD
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.7
1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS7764A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 15A SO-8
FDS7764A_F041 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7764A_L86Z 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7764S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7764S_Q 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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