參數(shù)資料
型號： FDS7060N7
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 19 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SO-8
文件頁數(shù)： 2/7頁
文件大?。?/td> 213K
代理商： FDS7060N7
FDS7060N7 Rev C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
Drain-Source Avalanche Energy
I
AS
Drain-Source Avalanche Current
Single Pulse, V
DD
=30V, I
D
= 19A
360
19
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
23
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= –20 V V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 19 A
V
GS
= 4.5V, I
D
= 16 A
V
GS
= 10 V, I
D
= 19 A,T
J
= 125
°
C
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 19 A
1
1.5
3
V
Gate Threshold Voltage
–4.7
mV/
°
C
4.0
5.8
6
78
5
7
6.5
m
A
S
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
60
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
3274
721
283
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
11
8
60
30
35
10
12
20
16
96
48
56
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 5 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 19 A,
V
GS
= 5 V
F
相關(guān)PDF資料
PDF描述
FDS7064A 30V N-Channel PowerTrench MOSFET
FDS7064N 30V N-Channel PowerTrench MOSFET
FDS7064SN3 30V N-Channel PowerTrench SyncFET
FDS7064N7 30V N-Channel PowerTrench MOSFET
FDS7066SN3 30V N-Channel PowerTrench SyncFET⑩
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS7064A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDS7064N 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7064N7 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7064N7 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR POLARITY:NPN
FDS7064SN3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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