參數(shù)資料
型號(hào)： FDS7064N7
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 16.5 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： BOTTOMLESS, SO-8
文件頁數(shù)： 1/7頁
文件大?。?/td> 195K
代理商： FDS7064N7
2004 Fairchild Semiconductor Corporation
FDS7064SN3 Rev C1 (W)
February 2004
FDS7064SN3
30V N
-
Channel PowerTrench
SyncFET
General Description
The FDS7064SN3 is designed to improve the efficiency
of Buck Regulators. Used as the Synchronous rectifier,
(Low side MOSFET), losses can be reduced, not only in
this device, but also in the Control switch, (High side
MOSFET). After the low side MOSFET turns off,
reverse recovery current in the body diode is dissipated
in the High Side device. A Discrete Schottky diode in
parallel with the Low Side MOSFET can lower the
reverse recovery current, but parasitic PCB and
Package Inductance reduce the effectiveness of the
Schottky.
SyncFET
technology
inductance to a minimum by providing a monolithic
solution (MOSFET and Schottky in the same die),
resulting in optimum performance.
reduces
this
Applications
Synchronous Rectifier
Features
16 A, 30 V
R
DS(ON)
= 8.0 m
@ V
GS
= 10 V
R
DS(ON)
= 9.5 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
No inductance between MOSFET and Schottky
40% reduction in Body Diode Forward Voltage
Optimized to reduce losses in Synchronous Buck
Regulators
FLMP SO-8 package for enhanced thermal
performance.
FLMP SO-8
S
D
S
S
SO-
D
NC
NC
NC
NC
D
D
G
S
S
S
G
D
Pin 1
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
16
16
60
3.13
1.5
–55 to +150
Units
V
V
A
(Note 1a)
P
D
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7064SN3
FDS7064SN3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS7064N7 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR POLARITY:NPN
FDS7064SN3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7066ASN3 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7066N3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS7066N7 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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