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參數(shù)資料
| 型號： | FDS6993 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel PowerTrench MOSFET |
| 中文描述： | 4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 159K |
| 代理商： | FDS6993 |
FDS6993 Rev C (W)
Electrical Characteristics
(continued)
Symbol
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
10
19
14
20
14
134
9
121
5.5
32
1.8
4.0
2.2
8.0
19
34
26
35
24
215
18
193
7.7
45
ns
ns
ns
ns
nC
nC
nC
Q1
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10V, R
GEN
= 6
Q2
V
DD
= –6 V, I
D
= –1 A,
V
GS
= –4.5V, R
GEN
= 6
Q1
V
DS
= –15 V, I
D
= –4.3 A,
V
= –5 V
Q2
V
DS
= –6 V, I
D
= –6.8 A,
V
GS
= –5 V
Q1
Q2
Q1
Q2
–1.3
–1.3
–1.2
–1.2
A
V
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.3 A
V
GS
= 0 V, I
S
= –1.3 A
(Note 2)
(Note 2)
–0.8
–0.6
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDS6994S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6993_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| FDS6994S | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6994S_Q | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS7060N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS7064A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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