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參數(shù)資料
| 型號： | FDS6982AS_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| 中文描述： | 8.6 A, 30 V, 0.0135 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 168K |
| 代理商： | FDS6982AS_NL |
FDS6982AS Rev A1 (X)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 μA, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
I
D
= 1 mA
I
D
= 250 uA
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
30
V
Breakdown Voltage
28
24
mV/
°
C
μ
A
500
1
±
100
V
GS
=
±
20 V, V
DS
= 0 V
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 1 mA
I
D
= 250 μA
Q2
Q1
Q2
1
1
1.4
1.9
–3.1
3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 uA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 8.6 A
V
GS
= 10 V, I
D
= 8.6 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 6.3 A
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 10 V,
V
DS
= 5 V
Q1
Q2
–4.3
11
16
13
18
26
23
mV/
°
C
13.5
20.0
16.5
22
33
29
R
DS(on)
Static Drain-Source
On-Resistance
Q1
m
I
D(on)
On-State Drain Current
Q2
Q1
Q2
Q1
30
20
A
S
g
FS
Forward Transconductance
V
DS
= 5 V,
V
DS
= 5 V,
I
D
= 8.6 A
I
D
= 6.3 A
32
19
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1250
610
410
180
130
85
1.4
2.2
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
R
G
Gate Resistance
V
GS
= 15mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
9
10
6
7
27
24
11
3
12
12
13
14
19
15
10
5
18
20
12
14
44
39
20
6
22
22
23
25
34
27
20
10
ns
ns
ns
ns
ns
ns
ns
ns
V
DD
= 15 V,
V
GS
= 10V, R
GEN
= 6
I
D
= 1 A,
V
DD
= 15 V,
V
GS
= 4.5V, R
GEN
= 6
I
D
= 1 A,
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6982S | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6982S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6982S_D84Z | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982S_NL | 制造商:Fairchild 功能描述:S08/SCHOTTKY,NCH,30V,500A(LEADFREE) |
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