參數(shù)資料
型號(hào): FDS6890A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
中文描述: 7.5 A, 20 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SOIC-8
文件頁數(shù): 4/8頁
文件大小: 241K
代理商: FDS6890A
F
FDS6890A Rev. C
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Typical Characteristics
(continued)
0.01
0.1
0.5
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =135 C/W
T = 25 C
A
JA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001
0001
0.01
0.1
t TIME sec)
1
10
100
300
0001
0002
0005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
S in g l e P ul s e
D =0.5
0.1
005
002
001
0.2
D u t y C y cl e, D = t t
1
2
T - T = P * R JA
P(pk)
t
1
t
2
R t) = r( t R
R =
135
C/W
JA
JA
JA
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
10ms
1ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
0
800
1600
2400
3200
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
0
1
2
3
4
5
0
6
12
18
24
30
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 7.5A
V
DS
= 5V
10V
15V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6890A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8
FDS6892 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
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FDS6892AZ 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6894 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET