- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375783 > FDS6679Z (FAIRCHILD SEMICONDUCTOR CORP) 30 Volt P-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDS6679Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 66K |
| 代理商： | FDS6679Z |
FDS6679Z Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A
–30
V
Breakdown Voltage Temperature
I
D
= –250
μ
A,Referenced to 25
°
C
–22
mV/
°
C
V
DS
= –24 V, V
GS
= 0 V
V
GS
= –25 V, V
DS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
–1
–10
10
μ
A
μ
A
μ
A
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –10 V, I
D
= –13 A
V
GS
= –4.5 V, I
D
= –11 A
V
GS
=–4.5 V, I
D
=–13A, T
J
=125
°
C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V, I
D
= –13 A
–1
–1.7
–3
V
Gate Threshold Voltage
4.9
mV/
°
C
7.2
10
10
43
9
13
13
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–50
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
3803
974
490
pF
pF
pF
V
DS
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
18
9
92
54
67
11
15
32
18
147
86
94
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6
V
DS
= –15 V, I
D
= –13 A,
V
GS
= –10 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.1
A
V
SD
V
GS
= 0 V, I
S
= –2.1 A
(Note 2)
–0.7
–1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in
2
pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6679 | 30 Volt P-Channel PowerTrench MOSFET |
| FDS6680AS | 30V N-Channel PowerTrench SyncFET |
| FDS6680AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDS6680 | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET |
| FDS6680A | Single N-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6679Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P |
| FDS6679Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6680 | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6680 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6680_L99Z | 功能描述:MOSFET N-Channel PWM Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。