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參數(shù)資料
| 型號： | FDS6679Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 66K |
| 代理商： | FDS6679Z |
October 2001
FDS6679Z
30 Volt P-Channel PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDS6679Z Rev C (W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
P-Channel
MOSFET
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
–13 A, –30 V. R
DS(ON)
= 9 m
@ V
GS
= –10 V
R
DS(ON)
= 13 m
@ V
GS
= – 4.5 V
Extended V
GSS
range (–25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
5
3
6
2
7
1
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
–30
–25/+20
–13
–50
2.5
1.2
1.0
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS6679Z
FDS6679Z
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6679 | 30 Volt P-Channel PowerTrench MOSFET |
| FDS6680AS | 30V N-Channel PowerTrench SyncFET |
| FDS6680AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDS6680 | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET |
| FDS6680A | Single N-Channel, Logic Level, PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6679Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P |
| FDS6679Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6680 | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6680 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6680_L99Z | 功能描述:MOSFET N-Channel PWM Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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