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參數(shù)資料
| 型號： | FDS4675 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 40V P-Channel PowerTrench MOSFET |
| 中文描述： | 11 A, 40 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | FDS4675 |
FDS4675 Rev C(W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-2.5V
-3.0V
-3.5V
-4.5V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
10
20
30
40
50
-I
D
, DIRAIN CURRENT (A)
R
D
,
D
V
GS
= -3.0V
-10V
-3.5V
-4.0V
-4.5V
-6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -11A
V
GS
= -10V
0
0.01
0.02
0.03
0.04
0.05
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -5.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
3.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5.0V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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| FDS4770 | RES ARRAY 100 OHM 4TERM 2RES SMD |
| FDS4780 | 40V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS4675 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SO-8 |
| FDS4675 | 制造商:Fairchild Semiconductor Corporation 功能描述:S0-8 SINGLE PCH 40V/20V:ROHS COMPLIAN |
| FDS4675_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:40V P-Channel Power TrenchMOSFET |
| FDS4675_F085 | 功能描述:MOSFET P-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4685 | 功能描述:MOSFET 40V PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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