參數(shù)資料
型號: FDS3912
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 100V Dual N-Channel PowerTrench MOSFET
中文描述: 3 A, 100 V, 0.125 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 3/6頁
文件大?。?/td> 125K
代理商: FDS3912
FDS3912 Rev C2(W)
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
1.3
1.2
A
V
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
0.76
30
106
nS
nC
I
F
= 3A
d
iF
/d
t
= 100 A/μs
(Note 2)
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDS3992 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
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FDS3992_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
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