參數(shù)資料
型號(hào): FDS3572
廠(chǎng)商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 8.9 A, 80 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 628K
代理商: FDS3572
2003 Fairchild Semiconductor Corporation
FDS3572 Rev. A
F
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
Figure 13. Gate Charge Waveforms for Constant Gate Currents
Typical Characteristics
T
A
= 25°C unless otherwise noted
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
10
100
1000
0.1
1
10
5000
80
C
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
0
10
20
30
40
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 40V
I
D
= 8.9A
I
D
= 1A
WAVEFORMS IN
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS3572 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 80V 8.9A SOIC
FDS3572_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS3572_Q 功能描述:MOSFET 80V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3580 功能描述:MOSFET SO-8 N-CH 80V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3580_00 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET