參數(shù)資料
型號(hào)： FDS2734
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm
中文描述： 3 A, 250 V, 0.225 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SO-8
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 375K
代理商： FDS2734
F
FDS2734 Rev. B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
V
GS
- Descending Order
V
GS
= 10V
8V
6V
5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2.
0
10
20
30
40
50
0.5
1.0
1.5
2.0
2.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 8V
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 10V
V
GS
= 6V
V
GS
= 4.5V
V
GS
=
5V
Normalized On-Resistance vs Drain
Current and Gate Voltage
Figure 3. Normalized
-50
-25
0
25
50
75
100
125
150
0.4
0.8
1.2
1.6
2.0
2.4
2.8
I
D
= 3.0A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
On Resistance vs Junction
Temperature
Figure 4.
3
4
5
6
7
8
9
10
0.0
0.1
0.2
0.3
0.4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
=3A
r
D
,
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
2
3
4
5
6
0
5
10
15
20
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward Voltage
vs Source Current
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